AVALANCHE BREAKDOWN IN ALXGA1-XAS ALLOYS AND AL0.3GA0.7AS/GAAS MULTILAYERS

被引：19

作者：

DAVID, JPR

ALLAM, J

ADAMS, AR

ROBERTS, JS

GREY, R

REES, GJ

ROBSON, PN

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV CAMBRIDGE,CAVENDISH LAB,HITACHI CAMBRIDGE LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期

关键词：

D O I：

10.1063/1.113459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The avalanche breakdown voltage (Vb) has been measured in a range of bulk AlxGa1-xAs alloys and Al0.3Ga0.7As/GaAs multilayer structures. The bulk alloys show a linear dependence of Vb on x up to at least x=0.6. Multilayers with thin (≤100 Å) dimensions follow this trend, with Vb being determined by the average Al fraction of the multilayer "pseudoalloy". For thicker (≥500 Å) layers Vb tends to a mean of the bulk values of the layers. The transition from pseudoalloy to bulklike behavior is interpreted in terms of the momentum and energy relaxation lengths, estimated for bulk GaAs using a Monte Carlo solution of the semiclassical transport equation.© 1995 American Institute of Physics.

引用

页码：2876 / 2878

页数：3

共 20 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].