EFFECT OF AMBIENT GAS ON UNDOPED LEC GAAS CRYSTAL

被引：6

作者：

EMORI, H

MATSUMURA, T

KIKUTA, T

FUKUDA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 11期

关键词：

D O I：

10.1143/JJAP.22.1652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1652 / 1655

页数：4

共 11 条

[1]

AKAI S, 1981, I PHYS C SER, V63, pP13

[2]

FUKUDA T, 1982, I PHYS C SER, V65, pP23

[3]

HAGI S, 1975, NETSUDENTATSU NO KIS, P213

[4]

Holmes D. E., 1982, IEEE T ELECTRON DEV, V29, P1045

[5] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[6]

HOLMES DE, 1980, SEMIINSULATING 3 5 M, P19

[7] BORON CONTAMINATION AND PRECIPITATION DURING THE GROWTH OF INP [J].

OBERSTAR, JD ;

STREETMAN, BG ;

BAKER, JE ;

WILLIAMS, P ;

HENRY, RL ;

SWIGGARD, EM .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :443-448

[8] UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM [J].

OLIVER, JR ;

FAIRMAN, RD ;

CHEN, RT ;

YU, PW .

ELECTRONICS LETTERS, 1981, 17 (22) :839-841

[9]

RUMSBY DH, 1981, I PHYS C SER, V63, pP573

[10]

STEINEMANN A, 1967, CRYST GROWTH, P81

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