NUMERICAL-ANALYSIS OF KINK EFFECT IN HJFET WITH A HETEROBUFFER LAYER

被引：18

作者：

KUNIHIRO, K

YANO, H

GOTO, N

OHNO, Y

机构：

[1] Microelectronics Research I.ahoratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期

关键词：

D O I：

10.1109/16.199352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The kink effect in an AlGaAs/GaAs HJFET with a heterobuffer layer is investigated using a two-dimensional device simulator with impact ionization and deep-trap models. It is confirmed that the accumulation of holes generated by impact ionization causes the kink effect. The influence of deep levels on the kink characteristics is also investigated. The kink effect is suppressed by electron traps in the channel region through the recombination of the generated holes. On the other hand, the kink effect is enhanced by hole traps, which are positively ionized by increases in hole concentration. However, excessive hole trap concentration suppresses the accumulation of holes, due to enhanced recombination with electrons. Under such conditions the kink effect vanishes.

引用

页码：493 / 497

页数：5

共 15 条

[1] EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].