TRANSIENT CURRENT INSTABILITIES IN A-SI-HP+NI STRUCTURES

被引：2

作者：

CHOI, WK ^{[1
]}

REYNOLDS, S ^{[1
]}

HAJTO, J ^{[1
]}

OWEN, AE ^{[1
]}

SNELL, AJ ^{[1
]}

ROSE, MJ ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE, CARNEGIE LAB PHYS, DUNDEE DD1 4HN, SCOTLAND

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1987.0001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：1 / 6

页数：6

共 22 条

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