DEPENDENCE OF THRESHOLD CURRENTS ON IMPURITY CONCENTRATIONS IN LASER DIODES

被引：3

作者：

NANNICHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.1714347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1499 / &

相关论文

共 8 条

[1] LASER CONDITIONS IN SEMICONDUCTORS
BERNARD, MGA
DURAFFOURG, G
[J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703
[2] GATOS H, 1960, PROPERTIES ELEMENTAL, P58
[3] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
LASHER, G
STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[4] THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES
MAYBURG, S
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1791 - &
[5] DEPENDENCE OF RECOMBINATION RADIATION ON CURRENT IN CAAS DIODES
MAYBURG, S
BLACK, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1521 - &
[6] EFFECT OF IMPURITY DISTRIBUTION ON SIMULTANEOUS LASER ACTION IN GAAS AT 0.84 + 0.88 MU ( ZN SN SI TE DOPANTS TEMPERATURE DEPENDENCE DEPENDS ON DOPING 4.2 DEGREES 27 DEGREES 78 DEGREES K E )
NELSON, H
DOUSMANIS, GC
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (11) : 192 - &
[7] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K
TURNER, WJ
REESE, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 350 - &
[8] LIGHT EMISSION AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL GAAS LASERS AND TUNNEL DIODES
WINOGRADOFF, NN
KESSLER, HK
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (04) : 119 - 122