A STUDY OF N+-SIPOS-P-SI HETEROJUNCTION EMITTERS

被引：18

作者：

YABLONOVITCH, E ^{[1
]}

GMITTER, T ^{[1
]}

机构：

[1] EXXON RES & ENGN CO,ANNANDALE,NJ 08801

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 11期

关键词：

D O I：

10.1109/EDL.1985.26243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：597 / 599

页数：3

共 11 条

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[Anonymous], [No title captured]

[2]

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[3]

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[4] SILICON HETEROJUNCTION TRANSISTOR [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (07) :549-550

[5]

MILLER GL, 1978, P ELECTROCHEM SOC, V78, P1

[6] A TRUE POLYSILICON EMITTER TRANSISTOR [J].

ROWLANDSON, MB ;

TARR, NG .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :288-290

[7]

RUNYAN WR, 1975, SEMICONDUCTOR MEASUR, P82

[8] EFFECTS OF SURFACE TREATMENTS ON THE ELECTRICAL CHARACTERISTICS OF BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS [J].

SOEROWIRDJO, B ;

ASHBURN, P .

SOLID-STATE ELECTRONICS, 1983, 26 (05) :495-498

[9] THE PASSIVATION OF ELECTRICALLY ACTIVE-SITES ON THE SURFACE OF CRYSTALLINE SILICON BY FLUORINATION [J].

WEINBERGER, BR ;

DECKMAN, HW ;

YABLONOVITCH, E ;

GMITTER, T ;

KOBASZ, W ;

GAROFF, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :887-891

[10]

YABLONOVITCH E, UNPUB ELECTRON HOLE

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