THEORETICAL AND EXPERIMENTAL-STUDY OF THE HYDROGENATED (100) MBE GROWN SURFACE OF GAAS

被引：13

作者：

CARETTE, T ^{[1
]}

LANNOO, M ^{[1
]}

ALLAN, G ^{[1
]}

FRIEDEL, P ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

SURFACE SCIENCE | 1985年 / 164卷 / 01期

关键词：

D O I：

10.1016/0039-6028(85)90711-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：260 / 270

页数：11

共 21 条

[1] HYDROGEN CHEMISORPTION ON 100 (2X1) SURFACES OF SI AND GE [J].

APPELBAUM, JA ;

BARAFF, GA ;

HAMANN, DR ;

HAGSTRUM, HD ;

SAKURAI, T .

SURFACE SCIENCE, 1978, 70 (01) :654-673

[2] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[3] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR) [J].

BRINGANS, RD ;

BACHRACH, RZ .

SOLID STATE COMMUNICATIONS, 1983, 45 (02) :83-86

[4] SI(100) SURFACES - ATOMIC AND ELECTRONIC-STRUCTURES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1290-1296

[5]

CHADI DJ, 1979, I PHYS C SER, V46, P174

[6]

DIMITRIOU P, 1980, THESIS PARIS

[7]

DOBSON PJ, 1982, SURF SCI, V119, pL339, DOI 10.1016/0039-6028(82)90177-7

[8]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[9] PHOTOEMISSION-STUDIES OF THE INTERACTION OF HYDROGEN PLASMAS WITH GAAS (001) [J].

FRIEDEL, P ;

LARSEN, PK ;

GOURRIER, S ;

CABANIE, JP ;

GERITS, WM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :675-680

[10] GROWTH OF DIELECTRIC FILMS ON SEMICONDUCTORS AND METALS USING A MULTIPOLE PLASMA [J].

GOURRIER, S ;

FRIEDEL, P ;

DIMITRIOU, P ;

THEETEN, JB .

THIN SOLID FILMS, 1981, 84 (04) :379-388

← 1 2 3 →