PHOTOEMISSION-STUDIES OF THE INTERACTION OF HYDROGEN PLASMAS WITH GAAS (001)

被引：30

作者：

FRIEDEL, P ^{[1
]}

LARSEN, PK ^{[1
]}

GOURRIER, S ^{[1
]}

CABANIE, JP ^{[1
]}

GERITS, WM ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：675 / 680

页数：6

共 16 条

[1] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR)
BRINGANS, RD
BACHRACH, RZ
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (02) : 83 - 86
[2] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE
CHANG, RPH
DARACK, S
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900
[3] CHIANG TC, 1983, PHYS REV B, V25, P6518
[4] DEMAY Y, 1983, THESIS ORSAY
[5] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[6] INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES
FRIEDEL, P
GOURRIER, S
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 509 - 511
[7] FRIEDEL P, 1982, THESIS ORSAY
[8] PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA
GOURRIER, S
SMIT, L
FRIEDEL, P
LARSEN, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3993 - 3997
[9] LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222
[10] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE
LARSEN, PK
NEAVE, JH
VANDERVEEN, JF
DOBSON, PJ
JOYCE, BA
[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4966 - 4977