NEUTRON-TRANSMUTATION DOPING OF GAAS-AS STUDIED BY ELECTRON-SPIN-RESONANCE

[1] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477

[2] TRANSMUTATION DOPING OF GAAS BY THERMAL-NEUTRONS [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (04) : 325 - 326

[3] SPIN-LATTICE RELAXATION OF IN-116 IN INP AND INSB IN THE PRESENCE OF (N,GAMMA)-INDUCED POINT-DEFECTS [J]. HYPERFINE INTERACTIONS, 1981, 10 (1-4): : 765 - 768

[4] HERZER H, SEMICONDUCTOR SILICO, P106

[5] MIRIANASHVILI SM, 1971, SOV PHYS SEMICOND+, V4, P1612

[6] MUELLER J, COMMUNICATION

[7] DOPING OF SEMI-INSULATING AND N-TYPE GAAS BY NEUTRON TRANSMUTATION [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3178 - 3180

[8] WORNER R, 1982, APPL PHYS LETT, V40, P141, DOI 10.1063/1.93016

[1] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477

[2] TRANSMUTATION DOPING OF GAAS BY THERMAL-NEUTRONS [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (04) : 325 - 326

[3] SPIN-LATTICE RELAXATION OF IN-116 IN INP AND INSB IN THE PRESENCE OF (N,GAMMA)-INDUCED POINT-DEFECTS [J]. HYPERFINE INTERACTIONS, 1981, 10 (1-4): : 765 - 768

[4] HERZER H, SEMICONDUCTOR SILICO, P106

[5] MIRIANASHVILI SM, 1971, SOV PHYS SEMICOND+, V4, P1612

[6] MUELLER J, COMMUNICATION

[7] DOPING OF SEMI-INSULATING AND N-TYPE GAAS BY NEUTRON TRANSMUTATION [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3178 - 3180

[8] WORNER R, 1982, APPL PHYS LETT, V40, P141, DOI 10.1063/1.93016