SECONDARY-ION MASS-SPECTROMETRY AND ITS USE IN DEPTH PROFILING

[1] ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61

[2] BARRINGTON AE, 1966, PROG NUCL ENERGY SER, V97, P245

[3] STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS) [J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 170 - 171

[4] Bernheim M., 1973, International Journal of Mass Spectrometry and Ion Physics, V12, P93, DOI 10.1016/0020-7381(73)80090-7

[5] MEANS OF OBTAINING UNIFORM SPUTTERING IN AN ION MICROPROBE [J]. SURFACE SCIENCE, 1972, 32 (03) : 743 - &

[6] IONIC SECONDARY EMISSION OF CUAL ALLOYS IN OXYGEN ATMOSPHERE [J]. JOURNAL DE PHYSIQUE, 1971, 32 (2-3): : 185 - &

[7] BUHL R, 1974, 2 P INT C SOL SURF K

[8] GLOW-DISCHARGE MASS-SPECTROMETRY - TECHNIQUE FOR DETERMINING ELEMENTAL COMPOSITION PROFILES IN SOLIDS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1779 - 1786

[9] COMBASSON JL, 1973, ION IMPLANTATION SEM, P285

[10] DOI H, 1970, RECENT DEVELOPMENTS, P1089

[1] ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61

[2] BARRINGTON AE, 1966, PROG NUCL ENERGY SER, V97, P245

[3] STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS) [J]. APPLIED PHYSICS LETTERS, 1973, 22 (04) : 170 - 171

[4] Bernheim M., 1973, International Journal of Mass Spectrometry and Ion Physics, V12, P93, DOI 10.1016/0020-7381(73)80090-7

[5] MEANS OF OBTAINING UNIFORM SPUTTERING IN AN ION MICROPROBE [J]. SURFACE SCIENCE, 1972, 32 (03) : 743 - &

[6] IONIC SECONDARY EMISSION OF CUAL ALLOYS IN OXYGEN ATMOSPHERE [J]. JOURNAL DE PHYSIQUE, 1971, 32 (2-3): : 185 - &

[7] BUHL R, 1974, 2 P INT C SOL SURF K

[8] GLOW-DISCHARGE MASS-SPECTROMETRY - TECHNIQUE FOR DETERMINING ELEMENTAL COMPOSITION PROFILES IN SOLIDS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1779 - 1786

[9] COMBASSON JL, 1973, ION IMPLANTATION SEM, P285

[10] DOI H, 1970, RECENT DEVELOPMENTS, P1089