TETRAHEDRAL-SITE VS HEXAGONAL-SITE SELF-INTERSTITIAL IN SILICON

[1] SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI [J]. PHYSICAL REVIEW B, 1973, 8 (04) : 1777 - 1780

[2] CLUSTER-EXTENDED GREENS-FUNCTION FOR ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1010 - 1016

[3] CALCULATION OF SI AND AL INTERSTITIALS IN SILICON USING THE CLUSTER-EXTENDED GREENS-FUNCTION TECHNIQUE [J]. PHYSICA B & C, 1983, 116 (1-3): : 76 - 78

[4] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (10) : 739 - 742

[5] BOGUSLAWSKI P, UNPUB

[6] OPTICAL MATRIX-ELEMENTS AND CROSS-SECTIONS FOR DEEP LEVELS IN GAAS - THE IMPURITY SUPER-LATTICE MODEL [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (06): : 1187 - 1198

[7] ELECTRONIC-STRUCTURE OF COMPLEX DEFECTS IN SILICON - DIVACANCY AND SPLIT 100 INTERSTITIAL [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (04): : 849 - 852

[8] Kostadinov G., 1963, Planovo Stopanstvo i Statistika, P46

[9] LANNOO M, 1981, POINT DEFECTS SEMICO, V1, P84

[10] STUDY OF NEUTRAL UN-DISTORTED VACANCY IN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (17): : 3651 - 3660

[1] SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI [J]. PHYSICAL REVIEW B, 1973, 8 (04) : 1777 - 1780

[2] CLUSTER-EXTENDED GREENS-FUNCTION FOR ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1010 - 1016

[3] CALCULATION OF SI AND AL INTERSTITIALS IN SILICON USING THE CLUSTER-EXTENDED GREENS-FUNCTION TECHNIQUE [J]. PHYSICA B & C, 1983, 116 (1-3): : 76 - 78

[4] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (10) : 739 - 742

[5] BOGUSLAWSKI P, UNPUB

[6] OPTICAL MATRIX-ELEMENTS AND CROSS-SECTIONS FOR DEEP LEVELS IN GAAS - THE IMPURITY SUPER-LATTICE MODEL [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (06): : 1187 - 1198

[7] ELECTRONIC-STRUCTURE OF COMPLEX DEFECTS IN SILICON - DIVACANCY AND SPLIT 100 INTERSTITIAL [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (04): : 849 - 852

[8] Kostadinov G., 1963, Planovo Stopanstvo i Statistika, P46

[9] LANNOO M, 1981, POINT DEFECTS SEMICO, V1, P84

[10] STUDY OF NEUTRAL UN-DISTORTED VACANCY IN SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (17): : 3651 - 3660