ELECTRONIC-STRUCTURE OF COMPLEX DEFECTS IN SILICON - DIVACANCY AND SPLIT 100 INTERSTITIAL

被引：6

作者：

KAUFFER, E

PECHEUR, P

GERL, M

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 04期

关键词：

D O I：

10.1051/rphysap:01980001504084900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：849 / 852

页数：4

共 16 条

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[8] COMMENT ON ELECTRONIC-STRUCTURE OF NEUTRAL VACANCY IN SILICON [J].

KAUFFER, E ;

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PHYSICAL REVIEW B, 1977, 15 (08) :4107-4108

[9] CALCULATION OF ENERGY-LEVELS OF A NEUTRAL VACANCY AND OF SELF-INTERSTITIALS IN SILICON [J].

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