METAL INTRINSIC DIAMOND SEMICONDUCTING DIAMOND JUNCTION DIODES FABRICATED FROM POLYCRYSTALLINE DIAMOND FILMS

被引：14

作者：

MIYATA, K ^{[1
]}

DREIFUS, DL ^{[1
]}

机构：

[1] KOBE STEEL USA INC, CTR ELECTR MAT, RES TRIANGLE PK, NC 27709 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.352783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of metal/intrinsic semiconductor/semiconductor junctions formed by Al, undoped polycrystalline diamond, and B-doped p-type polycrystalline diamond films were investigated. These results are compared with those of standard metal/semiconductor junctions formed by direct metallization of Al on p-type semiconducting diamond. Polycrystalline diamond samples were grown using a microwave plasma-assisted chemical vapor deposition technique. These diamond thin films were then annealed, and chemically cleaned in order to stabilize their electrical properties prior to metallization. Good rectifying characteristics, with rectification ratios of 10(6)-10(7) at 5 V, were obtained for metal-intrinsic diamond-semiconducting diamond junctions. Reverse bias breakdown voltages in excess of 20 V were observed with increasing thickness of the undoped diamond layer. Rectification was observed at 300-degrees-C with a ratio of forward to reverse current of 10(3) at 5 V. A first-order model has been proposed to explain the effects of the undoped layer on the electrical characteristics of this junction diode. Only poor rectifying characteristics were obtained for metal-semiconductor junctions.

引用

页码：4448 / 4456

页数：9

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