NOVEL FULLY CMOS-COMPATIBLE VACUUM SENSOR

被引：42

作者：

PAUL, O

BALTES, H

机构：

[1] Physical Electronics Laboratory, ETH Zurich, Zurich

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期

关键词：

CMOS-COMPATIBLE SENSORS; PRESSURE SENSORS;

D O I：

10.1016/0924-4247(94)00878-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a new CMOS-compatible pressure sensor operating in the range of 100-10(6) Pa. The sensor is fabricated in standard CMOS technology, followed by simple postprocessing consisting of photolithography and a sacrificial metal etch. No anisotropic etching of silicon is required.

引用

页码：143 / 146

页数：4

共 8 条

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[2]

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[3]

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[4]

MASTRANGELO CH, 1991, 6TH P INT C SOL STAT, P245

[5] PERFORMANCE OF INTEGRATED THERMOPILE VACUUM SENSORS [J].

VANHERWAARDEN, AW ;

SARRO, PM .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1988, 21 (12) :1162-1167

[6]

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[7] OPTIMIZATION TOOL FOR THE PERFORMANCE PARAMETERS OF THERMOELECTRIC MICROSENSORS [J].

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SENSORS AND ACTUATORS A-PHYSICAL, 1993, 36 (01) :65-71

[8]

WUTZ M, 1989, THEORY PRACTICE VACU, P36

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