GEMOW REFRACTORY OHMIC CONTACTS TO N-TYPE GAAS WITH IN0.5GA0.5AS CAP LAYER

被引：2

作者：

MERKEL, KG

BRIGHT, VM

SCHAUER, SN

HUANG, CI

ROBINSON, GD

机构：

[1] USA,ELECTR TECHNOL & DEV LAB,FT MONMOUTH,NJ 07703

[2] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 05期

关键词：

SEMICONDUCTOR DEVIDES AND MATERIALS; INDIUM COMPOUNDS; OHMIC CONTACTS;

D O I：

10.1049/el:19930321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In0.5Ga0.5As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700-degrees-C. A minimum contact resistance of 0-176 OMEGA mm was obtained following furnace annealing at 500-degrees-C.

引用

收藏

页码：480 / 481

页数：2

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