A NEW GAAS TECHNOLOGY FOR STABLE FETS AT 300-DEGREES-C

[1] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CHEMICALLY ETCHED GAAS [J]. SURFACE SCIENCE, 1985, 162 (1-3) : 708 - 716

[2] BAESOM JD, 1982, IEEE T INF ELECTRON, V29, P112

[3] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 869 - 871

[4] FABRICATION AND HIGH-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED GAAS BIPOLAR-TRANSISTORS AND RING-OSCILLATORS [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) : 136 - 139

[5] INSULATED-GATE AND JUNCTION-GATE FETS OF CVD-GROWN BETA-SIC [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 48 - 49

[6] KRETSCHMER KH, 1987, APR IEEE REL PHYS S

[7] A GAAS INTEGRATED HALL SENSOR AMPLIFIER [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 222 - 224

[8] PETTENPAUL E, 1985, NOV P GAAS IC S MONT, P169

[9] PRIOR CJ, 1988, MICROWAVE J, V31, P157

[10] SCHUTZ R, 1988, FEB P INT TECHN EL C, P52

[1] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CHEMICALLY ETCHED GAAS [J]. SURFACE SCIENCE, 1985, 162 (1-3) : 708 - 716

[2] BAESOM JD, 1982, IEEE T INF ELECTRON, V29, P112

[3] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 869 - 871

[4] FABRICATION AND HIGH-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED GAAS BIPOLAR-TRANSISTORS AND RING-OSCILLATORS [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 1982, 29 (02) : 136 - 139

[5] INSULATED-GATE AND JUNCTION-GATE FETS OF CVD-GROWN BETA-SIC [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 48 - 49

[6] KRETSCHMER KH, 1987, APR IEEE REL PHYS S

[7] A GAAS INTEGRATED HALL SENSOR AMPLIFIER [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 222 - 224

[8] PETTENPAUL E, 1985, NOV P GAAS IC S MONT, P169

[9] PRIOR CJ, 1988, MICROWAVE J, V31, P157

[10] SCHUTZ R, 1988, FEB P INT TECHN EL C, P52