VERY LOW RESISTIVITY OHMIC CONTACT TO P-TYPE GAAS USING INXGA1-XAS INTERLAYER

被引：2

作者：

JANEGA, PL

CHATENOUD, F

WASILEWSKI, Z

机构：

[1] National Research Council Canada, Division of Physics, Laboratory for Microstructual Science, Ottawa

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 17期

关键词：

Semiconductor devices and materials;

D O I：

10.1049/el:19900897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very low resistivity ohmic contact to 5 x 1017at/cm3beryllium doped GaAs was obtained by interposing a small bandgap p+InxGa1-xAs layer, grown by molecular beam epitaxy, between the p-GaAs and the metallisation. The thickness of the interlayer was less than 2000 Å. Specific contact resistance as low as 6.4 x 10-8μcm2was achieved. These contacts exhibit excellent adhesion, have smooth surfaces and are easy to fabricate. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1395 / 1397

页数：3

共 13 条

[1]

BERGER HH, 1972, ELECTROCHEM J SOC, V119

[2]

BROOKS RC, 1985, IEEE ELECTRON DEV LE, V6

[3] COMPREHENSIVE STUDY OF AUMN P-TYPE OHMIC CONTACT FOR GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].