APPLICATION OF CHARGE-COUPLED-DEVICES TO INFRARED DETECTION AND IMAGING

被引：45

作者：

STECKL, AJ

NELSON, RD

FRENCH, BT

GUDMUNDSEN, RA

SCHECHTER, D

机构：

[1] ROCKWELL INT,ELECTR RES DIV,ANAHEIM,CA 92803

[2] CALIF STATE UNIV,DEPT PHYS ASTRON,LONG BEACH,CA 90840

来源：

关键词：

D O I：

10.1109/PROC.1975.9708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 74

页数：8

共 37 条

[31] SHEPHERD FD, 1973, TECHNICAL DIGEST, P310
[32] EXTRINSIC IR PHOTOCONDUCTIVITY OF SI DOPED WITH B, AL, GA, P, AS, OR SB
SOREF, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5201 - +
[33] STECKL AJ, 1973, SEP P CCD APPL C, P247
[34] STECKL AJ, TO BE PUBLISHED
[35] SZE SM, 1969, PHYSICS SEMICONDUCTO
[36] TAO TF, 1973, SEP P CCD APPL C, P259
[37] FIELD-EFFECT MEASUREMENTS ON HGCDTE SURFACE
TASCH, AF
CHAPMAN, RA
BREAZEALE, BH
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4202 - +