LATERAL TRAVELING SOLVENT GROWTH IN INDIUM ARSENIDE

[1] BIEDERMANN E, 1964, PHYS VERH, V3, P110

[2] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 805 - 810

[3] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[4] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[5] Pfann W., 1955, J MET, V7, P961

[6] Pfann W. G., 1958, ZONE MELTING

[7] MIGRATION OF A LIQUID ZONE THOUGH A SOLID .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2757 - &

[8] GROWTH OF GAP CRYSTALS + P-N JUNCTIONS BY TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1892 - &

[9] DETERMINATION OF DIFFUSIVITIES IN LIQUID METALS BY MEANS OF TEMPERATURE-GRADIENT ZONE MELTING [J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (01) : 47 - 49

[10] WERNICK JH, 1957, J MET, V9, P1169

[1] BIEDERMANN E, 1964, PHYS VERH, V3, P110

[2] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 805 - 810

[3] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[4] CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2885 - &

[5] Pfann W., 1955, J MET, V7, P961

[6] Pfann W. G., 1958, ZONE MELTING

[7] MIGRATION OF A LIQUID ZONE THOUGH A SOLID .1. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2757 - &

[8] GROWTH OF GAP CRYSTALS + P-N JUNCTIONS BY TRAVELING SOLVENT METHOD [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1892 - &

[9] DETERMINATION OF DIFFUSIVITIES IN LIQUID METALS BY MEANS OF TEMPERATURE-GRADIENT ZONE MELTING [J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (01) : 47 - 49

[10] WERNICK JH, 1957, J MET, V9, P1169