EXAMINATION OF FLUOROCARBON-BASED PLASMAS USED IN THE SELECTIVE AND UNIFORM ETCHING OF SILICON DIOXIDE BY RESPONSE-SURFACE METHODOLOGY - EFFECTS OF HELIUM ADDITION

被引:14
作者
RILEY, PE [1 ]
KULKARNI, VD [1 ]
BISHOP, SH [1 ]
机构
[1] NATL SEMICOND CORP,SANTA CLARA,CA 95051
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期
关键词
D O I
10.1116/1.584441
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:24 / 34
页数:11
相关论文
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