VOLUME AND TEMPERATURE-DEPENDENCE OF THE 1/F NOISE PARAMETER-ALPHA IN SI

[21] NOISE IN NEAR-BALLISTIC N+NN+ AND N+PN+ GALLIUM-ARSENIDE SUB-MICRON DIODES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (05) : 437 - 444

[22] Smith R.A., 1978, SEMICONDUCTORS

[23] SPATIAL-DISTRIBUTION OF 1/F NOISE SOURCE [J]. JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 157 - 160

[24] VANDAMME LKJ, 1983, NOISE PHYSICAL SYSTE, P183

[25] GENERALIZED SEMICLASSICAL QUANTUM 1/F NOISE THEORY .1. ACCELERATION 1/F NOISE IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 903 - 906

[26] ANALYSIS OF SYMMETRICAL HALL PLATES WITH FINITE CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4659 - 4666

[27] ANALYSIS OF THE GREEK CROSS, A VANDERPAUW STRUCTURE WITH FINITE CONTACTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (11) : 911 - 914

[28] Wasscher J.D., 1961, PHILIPS RES REP, V16, P301

[21] NOISE IN NEAR-BALLISTIC N+NN+ AND N+PN+ GALLIUM-ARSENIDE SUB-MICRON DIODES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (05) : 437 - 444

[22] Smith R.A., 1978, SEMICONDUCTORS

[23] SPATIAL-DISTRIBUTION OF 1/F NOISE SOURCE [J]. JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 157 - 160

[24] VANDAMME LKJ, 1983, NOISE PHYSICAL SYSTE, P183

[25] GENERALIZED SEMICLASSICAL QUANTUM 1/F NOISE THEORY .1. ACCELERATION 1/F NOISE IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 903 - 906

[26] ANALYSIS OF SYMMETRICAL HALL PLATES WITH FINITE CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4659 - 4666

[27] ANALYSIS OF THE GREEK CROSS, A VANDERPAUW STRUCTURE WITH FINITE CONTACTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (11) : 911 - 914

[28] Wasscher J.D., 1961, PHILIPS RES REP, V16, P301