NOISE IN NEAR-BALLISTIC N+NN+ AND N+PN+ GALLIUM-ARSENIDE SUB-MICRON DIODES

被引：23

作者：

SCHMIDT, RR ^{[1
]}

BOSMAN, G ^{[1
]}

VANVLIET, CM ^{[1
]}

EASTMAN, LF ^{[1
]}

HOLLIS, M ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期

关键词：

D O I：

10.1016/0038-1101(83)90100-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 444

页数：8

共 26 条

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