VOLTAGE DEPENDENCE OF THE MOSFET GATE-TO-SOURCE DRAIN OVERLAP

被引：5

作者：

OH, CS ^{[1
]}

CHANG, WH ^{[1
]}

DAVARI, B ^{[1
]}

TAUR, Y ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,POB 218,YORKTOWN HTS,NY 10598

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 12期

关键词：

D O I：

10.1016/0038-1101(90)90148-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1650 / 1652

页数：3

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