SURFACE MORPHOLOGY OF LPE GROWN INP

被引：17

作者：

PAK, K ^{[1
]}

NISHINAGA, T ^{[1
]}

UCHIYAMA, S ^{[1
]}

机构：

[1] NAGOYA UNIV,FAC ENGN,DEPT ELECTR,NAGOYA 464,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 06期

关键词：

D O I：

10.1143/JJAP.16.949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：949 / 956

页数：8

共 20 条

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ULRICH, R .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153

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BLOM, GM ;

WOODALL, JM .

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[5] CRITERIA FOR TIPPING DURING LIQUID-PHASE EPITAXIAL-GROWTH OF INDIUM PHOSPHIDE [J].

BROWN, KE .

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[6] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) :160-168

[7]

Donahue J. A., 1970, Journal of Crystal Growth, V7, P221, DOI 10.1016/0022-0248(70)90014-X

[8] SURFACE MORPHOLOGY OF LIQUID-PHASE-EPITAXIAL INP [J].

GUHA, S ;

MAJERFELD, A ;

MOYES, N ;

ROBSON, PN .

ELECTRONICS LETTERS, 1975, 11 (14) :303-304

[9] LIQUID-PHASE EPITAXY OF INP [J].

HESS, K ;

STATH, N ;

BENZ, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1208-1212

[10]

HURLE DTJ, 1973, CRYSTAL GROWTH INTRO, P233

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