EFFECTS OF SUBSTRATE TEMPERATURES AND V/III RATIOS ON EPITAXIAL INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

UWAI, K

SUSA, N

MIKAMI, O

FUKUI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.L121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L121 / L123

页数：3

共 12 条

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[2]

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[3]

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[8]

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[9] INP MESFET GROWN BY MOCVD [J].

OGURA, M ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L548-L550

[10] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS [J].

RAZEGHI, M ;

POISSON, MA ;

LARIVAIN, JP ;

DUCHEMIN, JP .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :371-395

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