INP MESFET GROWN BY MOCVD

被引：15

作者：

OGURA, M

INOUE, K

BAN, Y

UNO, T

MORISAKI, M

HASE, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 09期

关键词：

D O I：

10.1143/JJAP.21.L548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L548 / L550

页数：3

共 11 条

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[5] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (09) :578-581

[6] THE ELECTRICAL CHARACTERISTICS OF INP SCHOTTKY DIODES [J].

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IZUMI, Y .

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[7] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J].

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[8] STUDY OF GOLD-N-INP CONTACTS [J].

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[9]

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[10]

Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9

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