THE ELECTRICAL CHARACTERISTICS OF INP SCHOTTKY DIODES

被引：10

作者：

HATTORI, K

IZUMI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5699 / 5701

页数：3

共 13 条

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ARCHER, RJ .

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[2]

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[5] PROPERTIES OF SCHOTTKY BARRIERS ON P-TYPE INDIUM-PHOSPHIDE [J].

KAMIMURA, K ;

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[6] INP METAL-INSULATED-SEMICONDUCTOR SCHOTTKY CONTACTS USING SURFACE OXIDE LAYERS PREPARED WITH BROMINE WATER [J].

KAMIMURA, K ;

SUZUKI, T ;

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4905-4907

[7] AN INP MIS DIODE [J].

LILE, DL ;

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[8] ORIGIN OF INCREASE IN SCHOTTKY-BARRIER HEIGHT WITH INTERFACIAL OXIDE THICKNESS [J].

PECKERAR, M .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4652-4652

[9] MEASUREMENT OF RICHARDSON CONSTANT OF GAAS SCHOTTKY BARRIERS [J].

SRIVASTAVA, AK ;

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[10]

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