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AU-GE OHMIC CONTACT TO N-GAAS BY IR LAMP ALLOYING

被引：10
作者：
YASUAMI, S
SAITO, Y
HOJO, A
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 03期
关键词：
D O I：
10.1143/JJAP.23.379
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：379 / 380
页数：2
相关论文
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[5]  
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