DEPOSITION OF AG IONS AND NEUTRAL ATOMS ON ZNSE(100) - INFLUENCE OF INTERFACE MORPHOLOGY ON SCHOTTKY-BARRIER FORMATION

Ag overlayers were grown on ZnSe(100) by thermal evaporation and by a new approach using partially ionized beams. For the latter, 4% of the atoms were ionized and accelerated to an energy of 300-400 eV, thus making it possible to vary the amount of surface disruption. Interface evolution was monitored with photoemission and low-energy electron diffraction. No disruption of the ZnSe surface was found for thermal evaporation, and three-dimensional growth was observed. For ion deposition, three-dimensional growth was again observed, but there was clear evidence of substrate disruption. Parallel measurements of band-bending changes show that the barrier height is the same to within 100 meV for neutral-atom and ion deposition, despite differences in interface morphology. © 1990 The American Physical Society.