THE ABSOLUTE LUMINESCENCE QUANTUM EFFICIENCY IN HYDROGENATED AMORPHOUS-SILICON

被引：33

作者：

JACKSON, WB

NEMANICH, RJ

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90593-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：353 / 356

页数：4

共 9 条

[1] MODEL FOR THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H AND RELATED MATERIALS
COLLINS, RW
PAUL, W
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5257 - 5262
[2] A DIRECT DETERMINATION OF THE LIFETIME DISTRIBUTION OF THE 1.4 EV LUMINESCENCE OF A-SI-H
DUNSTAN, DJ
DEPINNA, SP
CAVENETT, BC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13): : L425 - L429
[3] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[4] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION
JACKSON, WB
AMER, NM
BOCCARA, AC
FOURNIER, D
[J]. APPLIED OPTICS, 1981, 20 (08): : 1333 - 1344
[5] PHOTOLUMINESCENCE IN PURE AND DOPED AMORPHOUS SILICON
NASHASHIBI, TS
AUSTIN, IG
SEARLE, TM
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (03): : 831 - 835
[6] EXCITATION WAVELENGTH AND INTENSITY DEPENDENCE OF LUMINESCENCE DECAY IN A-SI(H)
SHAH, J
BAGLEY, BG
ALEXANDER, FB
[J]. SOLID STATE COMMUNICATIONS, 1980, 36 (03) : 199 - 203
[7] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H
STREET, RA
BIEGELSEN, DK
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 969 - 984
[8] LUMINESCENCE DECAY IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON
TSANG, C
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05): : 601 - 608
[9] TIME-RESOLVED PHOTO-LUMINESCENCE IN A-SI-H - SUB-BAND-GAP EXCITATION
WILSON, BA
KERWIN, TP
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5276 - 5284

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