ANISOTROPIC ELECTRICAL-PROPERTIES OF GESE

被引：13

作者：

ISHIHARA, Y ^{[1
]}

OHNO, Y ^{[1
]}

NAKADA, I ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 113,JAPAN

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1984年 / 121卷 / 01期

关键词：

D O I：

10.1002/pssb.2221210143

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：407 / 412

页数：6

共 17 条

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[13] GASE - LAYER COMPOUND WITH ANOMALOUS VALENCE-BAND ANISOTROPY [J].

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[14]

SCHONHERR E, 1980, CRYSTALS GROWTH PROP, V2

[15] ELECTRICAL AND OPTICAL PROPERTIES OF GASE [J].

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NAKAI, J ;

HAMAGUCHI, C .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) :1698-+

[16] EXPONENTIAL ABSORPTION EDGES IN GESE [J].

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ECONOMOU, NA .

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[17] ANISOTROPIC INDIRECT ABSORPTION-EDGE IN GESE [J].

VLACHOS, SV ;

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ECONOMOU, NA .

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