2-DIMENSIONAL ARRAY OF GAINASP-INP SURFACE-EMITTING LASERS

被引：35

作者：

UCHIYAMA, S

IGA, K

机构：

[1] Tokyo Inst of Technology, Research, Lab of Precision Machinery &, Electronics, Yokohama, Jpn, Tokyo Inst of Technology, Research Lab of Precision Machinery & Electronics, Yokohama, Jpn

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 04期

关键词：

RING ELECTRODES - ROUND MESA CAP - SE LASERS - WAFER-LEVEL TESTING;

D O I：

10.1049/el:19850115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：162 / 164

页数：3

共 4 条

[1] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS
IGA, K
SODA, H
TERAKADO, T
SHIMIZU, S
[J]. ELECTRONICS LETTERS, 1983, 19 (13) : 457 - 458
[2] LIAU ZL, 1984, 7TH INT GUID WAV OPT
[3] GAINASP-INP SURFACE EMITTING INJECTION-LASERS
SODA, H
IGA, K
KITAHARA, C
SUEMATSU, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2329 - 2330
[4] GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE
UCHIYAMA, S
IGA, K
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) : 1117 - 1118

← 1 →