RESISTIVITY OF THE SOLID-SOLUTIONS (CO-NI)SI2

被引：22

作者：

DHEURLE, FM

TERSOFF, J

FINSTAD, TG

CROS, A

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514

[2] FAC SCI LUMINY,DEPT PHYS,CNRS,UA 783,F-13288 MARSEILLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.336858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：177 / 180

页数：4

共 38 条

[11] REACTION OF SILICON WITH FILMS OF CO-NI ALLOYS - PHASE-SEPARATION OF THE MONOSILICIDES AND NUCLEATION OF THE DISILICIDES [J].

DHEURLE, FM ;

ANFITEATRO, DD ;

DELINE, VR ;

FINSTAD, TG .

THIN SOLID FILMS, 1985, 128 (1-2) :107-124

[12]

DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[13]

DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194

[14]

DHEURLE FM, 1983, IBM RC10422 RES REP

[15]

DHEURLE FM, 1985, THIN SOLID FILMS, V128, P263

[16]

FINSTAD TG, UNPUB THIN SOLID FIL

[17]

GAS P, UNPUB

[18] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J].

GIBSON, JM ;

BEAN, JC ;

POATE, JM ;

TUNG, RT .

THIN SOLID FILMS, 1982, 93 (1-2) :99-108

[19]

HALL EO, 1970, YIELD PHENOMENA META, P93

[20]

HIRTH JP, 1968, THEORY DISLOCATIONS, P715

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