INTERFACIAL STRUCTURE OF 2-DIMENSIONAL EPITAXIAL ER SILICIDE ON SI(111)

被引:48
作者
TUILIER, MH
WETZEL, P
PIRRI, C
BOLMONT, D
GEWINNER, G
机构
[1] Laboratoire de Physique et Spectroscopie Electronique, Faculté des Sciences et Techniques, 68093 Mulhouse Cédex, 4, R. des Freres Lumiere
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 04期
关键词
D O I
10.1103/PhysRevB.50.2333
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Auger-electron diffraction (AED) and surface-extended x-ray-absorption fine structure (SEXAFS) have been used to obtain a complete description of the atomic structure of a two-dimensional epitaxial Er silicide layer on Si(111). AED reveals that a monolayer of Er is located underneath a buckled Si double layer. The relevant Er-Si interlayer spacings are determined by means of single scattering cluster simulations and a R-factor analysis to be 1.92+/-0.05 angstrom to the first and 2.70+/-0.05 angstrom to the second Si top layer. Er near-neighbor bond lengths and coordination numbers are obtained independently from polarization-dependent SEXAFS. The SEXAFS data, when combined with the Si top-layer geometry inferred from AED, permit the determination of the atomic positions at the silicide/Si(111) interface. The Er is found to reside in relaxed T4 sites of Si(111) with a single Er-Si distance of 3.09+/-0.04 angstrom to the first-and second-layer Si atoms of the substrate.
引用
收藏
页码:2333 / 2338
页数:6
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