GROWTH OF HIGH-QUALITY 1.93-EV ALGAAS USING METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:4
作者
LEWIS, CR
HAMAKER, HC
GREEN, RT
机构
关键词
D O I
10.1007/BF02657912
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:365 / 371
页数:7
相关论文
共 32 条
[1]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[2]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[3]  
DINGLE R, 1978, HETEROSTRUCTURE LA A
[4]   MEASUREMENT AND REDUCTION OF WATER-VAPOR CONTENT IN ASH3 AND PH3 SOURCE GASES USED IN EPITAXY [J].
FRAAS, LM ;
CAPE, JA ;
MCLEOD, PS ;
PARTAIN, LD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :921-922
[5]  
HAMAKER HC, 1985, 18TH P PHOT SPEC C I, P140
[6]   A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].
HERSEE, SD ;
DIFORTEPOISSON, MA ;
BALDY, M ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :53-57
[7]  
KASEMET D, 1983, I PHYS C SER, V65, P79
[8]  
KASEMSET D, 1982, 10TH P INT S GAAS RE
[9]   THE GETTERING EFFECTS OF GA-IN-AL TERNARY MELT BUBBLER ON GROWTH-RATE AND SOLID COMPOSITION OF MOCVD ALGAAS [J].
KIM, MS ;
MIN, S ;
CHUN, JS .
JOURNAL OF CRYSTAL GROWTH, 1986, 74 (01) :21-26
[10]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030