IMPROVEMENT OF LINEWIDTH CONTROL WITH ANTIREFLECTIVE COATING IN OPTICAL LITHOGRAPHY

被引：10

作者：

LIN, YC

PURDES, AJ

SALLER, SA

HUNTER, WR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1110 / 1115

页数：6

共 10 条

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[5]

NEUREUTHER AR, 1981, P SOC PHOTO-OPT INST, V275, P110, DOI 10.1117/12.931880

[6] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J].

OLDHAM, WG ;

NANDGAONKAR, SN ;

NEUREUTHER, AR ;

OTOOLE, M .

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[7] LINEWIDTH CONTROL IN PROJECTION LITHOGRAPHY USING A MULTILAYER RESIST PROCESS [J].

OTOOLE, MM ;

LIU, ED ;

CHANG, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1405-1410

[8]

Ting C. H., 1981, IBM Technical Disclosure Bulletin, V24

[9] ANTIREFLECTION COATINGS ON METAL LAYERS FOR PHOTOLITHOGRAPHIC PURPOSES [J].

VANDENBERG, HAM ;

VANSTADEN, JB .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1212-1214

[10]

WIDEMAN DW, 1975, IEEE T ELECTRON DEVI, V22, P467

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