CONSEQUENCES OF ANION VACANCY NEAREST-NEIGHBOR HOPPING IN III-V-COMPOUND SEMICONDUCTORS - DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：50

作者：

VANVECHTEN, JA ^{[1
]}

WAGER, JF ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

关键词：

D O I：

10.1063/1.334431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1956 / 1960

页数：5

共 38 条

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