ON THE LOCATION OF THE MISFIT DISLOCATIONS IN INGAAS/INP MBE SINGLE HETEROSTRUCTURES

被引:14
作者
FRANZOSI, P
SALVIATI, G
GENOVA, F
STANO, A
TAIARIOL, F
机构
[1] CNR,MASPEC,PARMA,ITALY
[2] CSELT,TURIN,ITALY
关键词
D O I
10.1016/0167-577X(85)90132-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:425 / 428
页数:4
相关论文
共 24 条
[1]   X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].
BARTELS, WJ ;
NIJMAN, W .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525
[2]  
Chin A. K., 1983, Materials Letters, V1, P152, DOI 10.1016/0167-577X(83)90006-X
[3]   DEGRADATION OF 1.3-MUM INP INGAASP LIGHT-EMITTING-DIODES WITH MISFIT DISLOCATIONS [J].
CHIN, AK ;
ZIPFEL, CL ;
CHIN, BH ;
DIGIUSEPPE, MA .
APPLIED PHYSICS LETTERS, 1983, 42 (12) :1031-1033
[4]   MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].
CHU, SNG ;
MACRANDER, AT ;
STREGE, KE ;
JOHNSTON, WD .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :249-257
[5]  
COCITO M, UNPUB SCANNING ELECT
[6]  
COCITO M, UNPUB
[7]   LOW DARK-CURRENT, HIGH-EFFICIENCY PLANAR IN0.53 GA0.47 AS-INP P-I-N PHOTO-DIODES [J].
FORREST, SR ;
CAMLIBEL, I ;
KIM, OK ;
STOCKER, HJ ;
ZUBER, JR .
ELECTRON DEVICE LETTERS, 1981, 2 (11) :283-285
[8]   EFFECT OF INP SUBSTRATE THERMAL-DEGRADATION ON MBE INGAAS LAYERS [J].
GENOVA, F ;
PAPUZZA, C ;
RIGO, C ;
STANO, S .
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :635-638
[9]   GROWTH OF IN.53GA.47AS LAYERS ON INP SUBSTRATES FOR IR DETECTORS BY MBE [J].
GENOVA, F ;
RIGO, C ;
STANO, A .
MATERIALS CHEMISTRY AND PHYSICS, 1984, 11 (02) :135-144
[10]   DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].
HORNSTRA, J ;
BARTELS, WJ .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517