SITE SYMMETRY AND GROUND-STATE CHARACTERISTICS FOR THE OXYGEN DONOR IN SILICON

被引：52

作者：

STAVOLA, M

LEE, KM

NABITY, JC

FREELAND, PE

KIMERLING, LC

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.54.2639

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2639 / 2642

页数：4

共 16 条

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[9]

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[10] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J].

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