DISSOLUTION FORMS OF SINGLE-CRYSTAL SPHERES .3. DISSOLUTION FORMS OF GE AND SI

被引：8

作者：

FRANKE, W

HEIMANN, R

LACMANN, R

机构：

[1] FREIE UNIV BERLIN,INST MINERAL,D-1000 BERLIN 33,FED REP GER

[2] MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 28卷 / 01期

关键词：

D O I：

10.1016/0022-0248(75)90036-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：145 / 150

页数：6

共 15 条

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[7]

HEYER H, 1958, GLEICHGEWICHTS WACHS

[8] THE ORIENTATION DEPENDENCE OF ETCHING EFFECTS ON GERMANIUM CRYSTALS [J].

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[9] CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J].

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