UNRAVELING THE MU-TAU-MYSTERY IN A-SI-H

被引：8

作者：

ANTONIADIS, H

SCHIFF, EA

机构：

[1] Physics Department, Syracuse University, Syracuse

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80148-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The mu-tau-mystery is the large difference between mobility-lifetime products (mu-tau) in a-Si:H estimated from steady-state photoconductivity and transient photocharge measurements. We discuss whether this effect can be attributed to deep-trapping of electrons and subsequent re-emission prior to recombination. We present a simplified version of the re-emission model which shows that its principal assumptions can be checked using photocharge measurements over a sufficiently large time range. Measurements of the transient photocharge in a-Si:H are presented between 10(-8) and 10(2) s; the measurements show the same features as the re-emission model, and permit the characteristic emission time to be measured.

引用

页码：435 / 438

页数：4

共 20 条

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[8] SOLUTION OF THE MU-TAU PROBLEM IN A-SI-H [J].

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