ELECTRON MOBILITY-LIFETIME PRODUCT AND D0 DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON

被引：13

作者：

HOTALING, SP

ANTONIADIS, H

SCHIFF, EA

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90604-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：420 / 422

页数：3

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