HIGHLY SELECTIVE DRY ETCHING OF POLYSILICON USING CHLORINATED GAS-MIXTURES FOR VLSI APPLICATIONS

被引：7

作者：

DEGENKOLB, E

PARK, KO

SHORTER, JB

TABASKY, M

机构：

[1] GTE Lab, Waltham, MA, USA, GTE Lab, Waltham, MA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114275

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SEMICONDUCTOR DEVICE MANUFACTURE

引用

页码：2027 / 2030

页数：4

共 10 条

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[9] REACTIVE ION ETCHING OF SILICON WITH CL2/AR(1) [J].

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