REACTIVE ION ETCHING OF SILICON WITH CL2/AR(1)

被引：30

作者：

POGGE, HB

BONDUR, JA

BURKHARDT, PJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 07期

关键词：

D O I：

10.1149/1.2120040

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1592 / 1597

页数：6

共 12 条

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ROBINSON RS, 1982, J VAC SCI TECHNOL, V21, P790, DOI 10.1116/1.571826

[10] REACTIVE ION ETCHING OF SILICON [J].

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