A NEW INSULATED-GATE INVERTED-STRUCTURE MODULATION-DOPED ALGAAS-GAAS-N-ALGAAS FIELD-EFFECT TRANSISTOR

被引：11

作者：

KINOSHITA, H

SANO, Y

ISHIDA, T

NISHI, S

AKIYAMA, M

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L836 / L838

页数：3

共 10 条

[1]

Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[2] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J].

DRUMMOND, TJ ;

KLEM, J ;

ARNOLD, D ;

FISCHER, R ;

THORNE, RE ;

LYONS, WG ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :615-617

[3]

HIYAMIZU S, 1984, 3RD INT C MBE, P52

[4] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET) [J].

INOUE, K ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L61-L63

[5] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J].

KATAYAMA, Y ;

MORIOKA, M ;

SAWADA, Y ;

UEYANAGI, K ;

MISHIMA, T ;

ONO, Y ;

USAGAWA, T ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L150-L152

[6]

Kinoshita H., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1629

[7]

KINOSHITA H, 1984, UNPUB J VAC SCI TECH, P53

[8]

LEE CP, 1983, 1983 GAASIC S, P162

[9]

MATSUMOTO K, 1984, 42ND ANN DEV RES C

[10]

SOLOMON PM, 1984, 42ND ANN DEV RES C

← 1 →