CONDUCTION-BAND DISPERSION, CRITICAL-POINTS, AND UNOCCUPIED SURFACE-STATES ON GAAS(110) - A HIGH-RESOLUTION ANGLE-RESOLVED INVERSE PHOTOEMISSION-STUDY

被引：85

作者：

STRAUB, D

SKIBOWSKI, M

HIMPSEL, FJ

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.32.5237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5237 / 5244

页数：8

相关论文

共 57 条

[1] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM
BACHELET, GB
CHRISTENSEN, NE
[J]. PHYSICAL REVIEW B, 1985, 31 (02) : 879 - 887
[2] BAIL C, 1972, PHYS STATUS SOLIDI B, V50, P199
[3] INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS
CALANDRA, C
SANTORO, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (02): : L51 - L54
[4] SURFACE STATES OF (110) SURFACE OF GAAS
CALANDRA, C
SANTORO, G
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (06): : L86 - L89
[5] SURFACE-DISORDER EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION SPECTRA
CERRINA, F
MYRON, JR
LAPEYRE, GJ
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1798 - 1802
[6] SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 631 - 636
[7] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[8] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[9] ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (03) : 267 - 271
[10] EXPERIMENTAL ENERGY-BAND DISPERSIONS, CRITICAL-POINTS, AND SPIN-ORBIT SPLITTINGS FOR GASB USING ANGLE-RESOLVED PHOTOEMISSION
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1980, 22 (06): : 2940 - 2944

← 1 2 3 4 5 6 →