INTRINSIC SURFACE STATES IN 3-5 COMPOUNDS

被引：27

作者：

CALANDRA, C

SANTORO, G

机构：

[1] UNIV DEGLI STUDI MODENA,IST FIS,MODENA,ITALY

[2] UNIV DEGLI STUDI MODENA,GRP NAZL STRUTT MAT,MODENA,ITALY

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 02期

关键词：

D O I：

10.1088/0022-3719/9/2/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L51 / L54

页数：4

共 17 条

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[6] PHOTOEMISSION SPECTROSCOPY USING SYNCHROTRON RADIATION .1. OVERVIEWS OF VALENCE-BAND STRUCTURE FOR GE, GAAS, GAP, INSB, ZNSE, CDTE, AND AGL [J].

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APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[8] BOND-ORBITAL MODEL .2. [J].

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[9] INTRINSIC SURFACE STATES IN SEMICONDUCTORS .1. DIAMOND-TYPE CRYSTALS [J].

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[10] INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORS [J].

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