THE MONOS MEMORY TRANSISTOR - APPLICATION IN A RADIATION-HARD NONVOLATILE RAM

被引:4
作者
BROWN, WD
JONES, RV
NASBY, RD
机构
[1] SANDIA NATL LABS,DIV 2144,ALBUQUERQUE,NM 87185
[2] SANDIA NATL LABS,DIV 2146,ALBUQUERQUE,NM 87185
关键词
DATA STORAGE; SEMICONDUCTOR - Random Access;
D O I
10.1016/0038-1101(85)90079-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to an 800 degree C oxidation step and some were then annealed at 900 degree C in nitrogen. The nitrogen anneal produces and increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10**9 cycles produces a 20% increase in memory window size and a 60% increase in decay rate.
引用
收藏
页码:877 / 884
页数:8
相关论文
共 17 条
[1]   RETENTION AND ENDURANCE CHARACTERISTICS OF HC1-ANNEALED AND UNANNEALED MNOS CAPACITORS [J].
BROWN, WD .
SOLID-STATE ELECTRONICS, 1979, 22 (04) :373-378
[2]  
BROWN WD, 1979, SOLID STATE TECHNOL, P77
[3]  
CRICCHI JR, 1974, ISSCC DIG TECH PAPER, P204
[4]  
DERBENWICK G, 1979, AFWLTR791 FIN REP
[5]   HIGH-TEMPERATURE ANNEALING OF MNOS DEVICES AND ITS EFFECT ON SI-NITRIDE STRESS, INTERFACE CHARGE-DENSITY AND MEMORY PROPERTIES [J].
HEZEL, R .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (04) :459-484
[6]  
HORNE MA, 1978, IEEE T ELECTRON DEVI, V25, P101
[7]  
JONES RV, 1983, P S SILICON NITRIDE, V83, P211
[8]   EFFECTS OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY RETENTION OF METAL-NITRIDE-OXIDE-SILICON TRANSISTORS AT ELEVATED-TEMPERATURES [J].
MAES, HE ;
USMANI, SH ;
HEYNS, GL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4348-4350
[9]   INFLUENCE OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY CHARACTERISTICS OF PARA-CHANNEL MNOS TRANSISTORS [J].
MAES, HE ;
HEYNS, GL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2706-2713
[10]   RADIATION-HARDENED MNOS RAM TECHNOLOGY [J].
MARRAFFINO, P ;
NEWMAN, R ;
WEGENER, HAR ;
BOROVICKA, MB ;
LEWIS, ET ;
LODI, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :1054-1060