EFFECTS OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY RETENTION OF METAL-NITRIDE-OXIDE-SILICON TRANSISTORS AT ELEVATED-TEMPERATURES

被引：13

作者：

MAES, HE

USMANI, SH

HEYNS, GL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4348 / 4350

页数：3

共 8 条

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[6] INFLUENCE OF A HIGH-TEMPERATURE HYDROGEN ANNEAL ON THE MEMORY CHARACTERISTICS OF PARA-CHANNEL MNOS TRANSISTORS [J].

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[7]

MAES HE, 1979, 3RD IEEE NVSM WORKSH

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