LASER-RECRYSTALLIZED SILICON THIN-FILM TRANSISTORS ON EXPANSION-MATCHED 800-DEGREES-C GLASS

被引:6
作者
TROXELL, JR
HARRINGTON, MI
MILLER, RA
机构
关键词
D O I
10.1109/EDL.1987.26733
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:576 / 578
页数:3
相关论文
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    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 68 - 74
  • [4] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS ON A NOVEL 800-DEGREES-C GLASS SUBSTRATE
    TROXELL, JR
    HARRINGTON, MI
    ERSKINE, JC
    DUMBAUGH, WH
    FEHLNER, FP
    MILLER, RA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 597 - 599
  • [5] TROXELL JR, 1986 SOC INF DISPL S, P298